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Technique
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Description
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Typical
Applications
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Instrument
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Navigation
Capability
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Resolution
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Minimum
Spot Size
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Maximum
Sample Size
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FE-SEM
Field Emission Scanning Electron Microscopy
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Scanning electron imaging to view samples at magnifications up to 500,000 times.
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Metrology, construction analysis, defect analysis
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Hitachi S4800, FEI XL50
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Yes
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6 Å
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45 Å
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Up to 200 mm wafer
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|
EDX
Energy Dispersive X-Ray Spectroscopy
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Elemental analysis
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Defect analysis, construction analysis
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NORAN System SIX
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Yes
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120 eV
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1 mm
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Up to 200 mm wafer
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BSE
Back Scattered Electron Imaging
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Contrast imaging of wafer cross section. Provides composition information
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Process identification
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Hitachi S4800
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Yes
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6 Å
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45 Å
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2-4 mm square sample
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|
FIB
Focused Ion Beam
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Sample preparation technique using ion beam to mill into very specific area of interest.
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Defect analysis, construction analysis, TEM sample prep
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FEI XL830, XL835 Dual Beam systems
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Yes
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3 nm (e-beam)
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na
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Up to 200 mm wafer
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FIB
Dualbeam-STEM
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Sample preparation technique using ion beam to mill into very specific area of interest. In-situ imaging using Scanning Transmission Electron Microscopy.
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Defect analysis, construction analysis, TEM sample prep, Circuit edit
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FEI Strata 400S
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No
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1 nm @ 15 kV ebeam
2 nm @ 5 kV ebeam
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na
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Max:80 mm diameter, 20 mm thickness
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TEM
Transmission Electron Microscopy
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Imaging of electrons transmitted through 100 nm thick speciman.
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Construction analysis, crystal phase, lattice damage and grain orientation
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JEOL 2010 Philips (FEI) CM300
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Yes with FIB preparation
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2 Å
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10 Å
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Up to 200 mm wafer using FIB preparation
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AEM
Analytical Transmission Electron Microscopy
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Elemental analysis on TEM sample.
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Defect analysis, construction analysis
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Gatan GIF-2002 Electron Energy Loss Spectrometer and Noran System Six EDXS
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Yes with FIB preparation
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2 Å
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10 Å
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Up to 200 mm wafer using FIB preparation
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