|
Technique
|
Description
|
Typical
Applications
|
Signal Detected
|
Resolution
|
Imaging
|
DMS
Navigation
Capability
|
Minimum
Spot Size
|
|
SIMS
Secondary Ion Mass Spectroscopy
|
Mass analysis surface and depth profiling
|
Dopant or compositional element depth analysis
|
Secondary Ions
|
Down to 1e12 at/cm3
|
No
|
No
|
100 μm X 100 μm raster
|
|
Quad-SIMS
Quadrupole Secondary Ion Mass Spectroscopy
|
Thin Film and Shallow Implant Depth Profile
|
Compositional element depth profile
|
Secondary Ions
|
Down to 1E16 at/cm3
|
No
|
No
|
50µm X 50µm raster
|
|
AES
Auger Electron Spectroscopy
|
Elemental surface analysis
|
Depth profiling with Ar sputter, surface contamination, cross-section analysis
|
Auger electrons
|
0.1-1 at%
|
Yes
|
Yes
|
300 Å
|
|
ESCA
Electron Spectroscopy for Chemical Analysis (aka XPS)
|
Elemental Surface analysis
|
Depth profiling with Ar sputter, chemical state information, thin film composition analysis
|
Photoelectrons
|
0.1 at%
|
No
|
No
|
10 μm
|
|
XRD
X-Ray Diffraction
|
Crystal Orientation Analysis
|
Grain size, orientation, and texture analysis
|
Crytal plane d-spacing
|
+/-.5%
|
No
|
No
|
10 mm X 1mm
STD
special 1mm spot
|
|
XRR
X-Ray Reflection
|
Reflectivity Analysis
|
Density, Interface, Roughness, and Thickness of thin films
|
Reflected X-rays
|
+/- 3% of signals detected
|
No
|
No
|
10mm x 50mm
|
|
AFM
Atomic Force Microscopy
|
Surface topography
|
Roughness of thin films, and step height information
|
Atomic morphology
|
< 2 Å
|
Yes
|
Yes (Manual
|
50 Å
|
|
μ−RS
Micro-Raman Spectroscopy
|
Molecular composition
|
Defect analysis, thin film monitoring
|
Bond vibration frequencies
|
Sample dependent
|
No
|
Yes
|
1 μm
|