Semiconductor Applications
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Analytical Measurements for Semiconductor Industry
Cerium Labs has developed world-class expertise in providing analytical support for semiconductor process technology. With over 15 years of experience we can address individual issues such as yield excursions, or support an entire out-source laboratory model.
Recent work:
- SIMS, VPD-ICP-MS, GC/MS
Dopant profiles are determined using either Dynamic or Quad SIMS. TOF-SIMS provides mapping of low level impurities. Trace contamination is identified using VPD-ICPMS for metals and GC/MS for the organics.
TEM, Auger, XPS
Thin gate oxide ~10 – 20 A is imaged with high resolution TEM. Barrier metal integrity (e.g., Ta for Cu interconnect and Ti/TiN for W plug) is imaged with TEM. For the W plug process any break of the barrier may lead to WF6 attacking the Si, which will form defects. Similarly, F from bond pad etch can be successfully monitored with Auger spectroscopy. Unwanted silicide formation related to excess free silicon in Si3N4 can be quickly analyzed by XPS.
XRD, EDS, Raman
Polysilicon orientation change from <111> to <220> that may cause faster diffusion of dopants due to the columnar nature of the <220> poly is monitored using XRD. Defects found by defect review tools in the fab can be analyzed with EDS and Raman spectroscopy to understand the chemical compositions and the possible source.
Cerium can provide analytical measurements for packaging issues and regulatory compliance. Analysis of incoming materials and chemical and physical characterization of returned parts are two additional areas of expertise.
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